35 dBm, 35 GHz power amplifier MMICs using 6-inch GaAs pHEMT commercial technology

Author

Mahon, S.J. ; Dadello, A. ; Fattorini, A.P. ; Bessemoulin, A. ; Harvey, J.T.

Author_Institution

Mimix Asia, Level 13, 80 Mount Street, North Sydney, NSW 2060, Australia

fYear

2008

fDate

15-20 June 2008

Firstpage

855

Lastpage

858

Abstract

A 3.5 watt, 35 GHz power amplifier MMIC has been developed. The amplifier exhibits high performance at low processing cost, through the use of a commercially available 6-inch, 0.15-mum pHEMT process with 100 mum thick substrate. The single-ended four stage amplifier MMIC has 22 dB of gain at 35 GHz, 3.5 watts saturated output power (35.5 dBm), and power added efficiency of more than 25%, within a chip size of 12.75 mm². In terms of power density, this is 740 mW/mm, which is to the authorspsila knowledge the best reported for fully matched GaAs pHEMT MMICs on 100-mum substrates at millimetre-wave frequencies.

Keywords

HEMT integrated circuits; III-V semiconductors; MMIC power amplifiers; gallium arsenide; GaAs; chip size; frequency 35 GHz; pHEMT commercial technology; power added efficiency; power amplifier MMIC; power density; saturated output power; single-ended four stage amplifier MMIC; size 0.15 mum; size 100 mum; size 6 inch; Costs; Gallium arsenide; MMICs; PHEMTs; Power amplifiers; Power measurement; Radio frequency; Radiofrequency amplifiers; Substrates; Temperature; MMIC power amplifiers;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2008 IEEE MTT-S International

Conference_Location

Atlanta, GA

ISSN

0149-645X

Print_ISBN

978-1-4244-1780-3

Electronic_ISBN

0149-645X

Type

conf

DOI

10.1109/MWSYM.2008.4632967

Filename

4632967