17-dB-gain CMOS power amplifier at 60GHz

A 60 GHz power amplifier with 17 dB small signal gain is designed and measured using standard 90 nm CMOS process technology. Simulation predicted accurate performances. The 3-dB bandwidth exceeding 57 to 65 GHz is achieved. This power amplifier delivers +5.1 dBm output P1dB with a maximum gain of 17 dB at 61 GHz for 54 mW total DC consumption, achieving 5.8% PAE and a saturated output power of +8.4 dBm at 60 GHz. This is the highest gain CMOS power amplifier operating in the 60 GHz unlicensed band reported till date. The first temperature dependent output power characteristics of 60 GHz CMOS power amplifier shows very stable operation over the entire temperature range between 0degC and +80 degC.