Title :
Quantifying distortion of RF power amplifiers for estimation of predistorter performance
Author :
Draxler, Paul J. ; Zhu, Anding ; Yan, Jonmei J. ; Kolinko, Pavel ; Kimball, Donald F. ; Asbeck, Peter M.
Author_Institution :
Qualcomm Inc., 5775 Morehouse Dr., San Diego, CA, USA
Abstract :
This paper demonstrates a method to quantify the accuracy of memory models and the effectiveness of digital predistortion of power amplifiers with memory. By using assumptions of periodic stationarity, coherent ensemble averaging and a stable measurement system, we are able to decompose the waveform distortion into memoryless, deterministic memory, and random memory contributions. We demonstrate how this can be used to evaluate the performance of a power amplifier and project its optimal performance with predistortion. We also show experimentally that the dynamic deviation reduction-based Volterra series digital predistortion technique has convergent behavior, moving towards these quantified targets when applied to a class AB power amplifier implemented with GaN FETs.
Keywords :
III-V semiconductors; Volterra series; distortion measurement; gallium compounds; power amplifiers; radiofrequency amplifiers; wide band gap semiconductors; GaN; GaN FETs; RF power amplifiers; convergent behavior; predistorter performance; random memory contributions; reduction-based Volterra series digital predistortion; Distortion measurement; Educational institutions; FETs; Gallium nitride; Linearization techniques; Power amplifiers; Power system modeling; Predistortion; Radio frequency; Radiofrequency amplifiers; Behavioral modeling; Volterra series; linearization; power amplifier; predistorter;
Conference_Titel :
Microwave Symposium Digest, 2008 IEEE MTT-S International
Conference_Location :
Atlanta, GA
Print_ISBN :
978-1-4244-1780-3
Electronic_ISBN :
0149-645X
DOI :
10.1109/MWSYM.2008.4632986