Novel magnetic nanostructured multilayer for high sensitive magnetoresistive sensor

Author

Xiaolu Yin ; Sy-Hwang Liou

Author_Institution

Dept. of Phys. & Astron., Univ. of Nebraska, Lincoln, NE, USA

fYear

2012

fDate

28-31 Oct. 2012

Firstpage

1

Lastpage

4

Abstract

The magnetic properties of the soft ferromagnetic layer in magnetic tunnel junctions are one of key factors to determine the performance of magnetoresistive sensor. In this paper, we compare two magnetic tunnel junctions with different free layer thicknesses that have very different magnetic characters, such as magnetization reversal behavior, magnetic corecivity, magnetic saturation field, and tunnel magnetoresistance ratio etc. In this study, we show a sensor with a sensitivity as high as 1916 %/mT. This magnetic sensor only dissipates 20 μW of power while operating under an applied voltage of 1 V.

Keywords

ferromagnetic materials; magnetic field measurement; magnetic sensors; magnetisation reversal; magnetoresistive devices; nanosensors; nanostructured materials; tunnelling magnetoresistance; free layer thickness; high sensitive magnetoresistive sensor; magnetic corecivity; magnetic nanostructured multilayer; magnetic saturation field; magnetic tunnel junction; magnetization reversal behavior; power 20 muW; soft ferromagnetic layer; tunnel magnetoreistance ratio; voltage 1 V; Annealing; Junctions; Magnetic fields; Magnetic flux; Magnetic tunneling; Sensitivity; Tunneling magnetoresistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Sensors, 2012 IEEE

Conference_Location

Taipei

ISSN

1930-0395

Print_ISBN

978-1-4577-1766-6

Electronic_ISBN

1930-0395

Type

conf

DOI

10.1109/ICSENS.2012.6411027

Filename

6411027