DocumentCode
2942923
Title
18-GHz bandwidth long-wavelength MODFET and metal-semiconductor-metal photodetector-based integrated photoreceiver
Author
Fay, P. ; Wohlmuth, W. ; Adesida, I. ; Caneau, C.
Author_Institution
Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA
fYear
1996
fDate
25 Feb.-1 March 1996
Firstpage
178
Lastpage
179
Abstract
Summary form only given. In this work, we report a further advance in the implementation of photoreceivers based on MSM-PDs and MODFETs, with a -3-dB bandwidth of 18 GHz and a sensitivity at a low bit-error-rate at 10 Gbit/s inferred from noise power measurements. The integration of MSM-PD and MODFET is done via a vertical integration scheme.
Keywords
HEMT integrated circuits; errors; integrated optoelectronics; metal-semiconductor-metal structures; optical receivers; photodetectors; photodiodes; sensitivity; 10 Gbit/s; 18 GHz; GHz bandwidth; MSM-PDs; integrated photoreceiver; long-wavelength MODFET; low bit-error-rate; metal-semiconductor-metal photodetector; noise power measurements; sensitivity; vertical integration scheme; Bandwidth; Bit rate; Clocks; Electrons; Fiber lasers; HEMTs; Laser mode locking; MODFETs; Optical distortion; Optical signal processing;
fLanguage
English
Publisher
ieee
Conference_Titel
Optical Fiber Communications, 1996. OFC '96
Print_ISBN
1-55752-422-X
Type
conf
DOI
10.1109/OFC.1996.908206
Filename
908206
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