Development of a high efficiency PFC abatement system utilizing plasma and Ca(OH)2/CaO under a decompression atmosphere

Author

Suzuki, K. ; Ishihara, Y. ; Sakoda, K. ; Shirai, Y. ; Hirayama, M. ; Teramoto, A. ; Ohmi, T. ; Watanabe, T.

Author_Institution

TAIYO NIPPON SANSO Corp., Ibaraki

fYear

2007

fDate

15-17 Oct. 2007

Firstpage

1

Lastpage

4

Abstract

We have developed a PFC abatement system utilizing a 2 MHz ICP plasma source and two columns filled with Ca(OH)₂/CaO under a decompression atmosphere without fluorine acid drainage treatment. The 2 MHz ICP plasma decomposes the PFCs. The Ca(OH)₂/CaO columns immobilize the reactive fluorinated compounds. When we treated the emissions from a Si oxidation film etching process chamber by using this abatement system, F₂ equivalent removal efficiency and CO₂ equivalent removal efficiency were 99.64% and 90.59%, respectively. The discrepancy between the two efficiencies can be attributed to the fact that 98% of CO₂ equivalent emissions were caused by power consumption.

Keywords

calcium compounds; etching; oxidation; plasma materials processing; silicon; CO₂ equivalent removal efficiency; Ca(OH)₂-CaO; F₂ equivalent removal efficiency; ICP plasma source; PFC abatement system; decompression atmosphere; fluorine acid drainage treatment; frequency 2 MHz; inductively coupled plasma; perfluorocompounds; power consumption; reactive fluorinated compounds immobilization; silicon oxidation film etching process; Atmosphere; Energy consumption; Etching; Oxidation; Plasma applications; Plasma materials processing; Plasma sources; Semiconductor films; Solids; Vacuum systems;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Manufacturing, 2007. ISSM 2007. International Symposium on

Conference_Location

Santa Clara, CA

ISSN

1523-553X

Print_ISBN

978-1-4244-1142-9

Electronic_ISBN

1523-553X

Type

conf

DOI

10.1109/ISSM.2007.4446796

Filename

4446796