6H-SiC CMOS digital ICs operating on a 5 V power supply

Author

Ryu, S. ; Kornegay, K.T. ; Cooper, J.A., Jr. ; Melloch, M.R.

Author_Institution

Sch. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA

fYear

1997

fDate

23-25 June 1997

Firstpage

38

Lastpage

39

Abstract

Summary form only given. CMOS is a very attractive technology for digital circuits because it offers full rail-to-rail output swings and greater noise margins than NMOS circuits. CMOS also provides active loads for linear circuits. Implementation of CMOS in silicon carbide (SiC) devices is expected to provide reliable circuits for high temperature operation. However, previous implementations of CMOS in SiC resulted in very high PMOS threshold voltages. This requires a high supply voltage, which is not desirable for high temperature operations. In this paper, we present the first CMOS digital IC in 6H-SiC to operate with a single 5 V power supply.

Keywords

CMOS digital integrated circuits; integrated circuit technology; semiconductor materials; silicon compounds; wide band gap semiconductors; 5 V; 6H-SiC; CMOS digital ICs; SiC; high temperature operation; noise margins; rail-to-rail output swings; reliable circuits; CMOS digital integrated circuits; CMOS technology; Circuit noise; Digital circuits; Linear circuits; MOS devices; Power supplies; Rail to rail outputs; Silicon carbide; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference Digest, 1997. 5th

Conference_Location

Fort Collins, CO, USA

Print_ISBN

0-7803-3911-8

Type

conf

DOI

10.1109/DRC.1997.612466

Filename

612466