Magnetoresistance and Current-driven Resistance Change Measurements in NiFe films with a Nanoconstriction

Author

Ohsawa, Y.

Author_Institution

Toshiba Corp., Kawasaki

fYear

2006

fDate

8-12 May 2006

Firstpage

613

Lastpage

613

Abstract

Ballistic magnetoresistance (MR) measurements with large magnetic field were performed using sputtered NiFe film as the MR layer. The origin of MR is deduced from current-driven resistance change measurements. The nanoscale point contact (PC) was formed at the junction of the pinned area, which is covered with a CoPt hard magnetic film, and the free area. Results show that the resistance increased (decreased) with positive (negative) sense current. This asymmetry might be due to the domain wall (DW) state, which was pinned at or depinned from the PC by a spin transfer effect.

Keywords

cobalt alloys; enhanced magnetoresistance; ferromagnetic materials; interface magnetism; iron alloys; magnetic domain walls; magnetic thin films; nanostructured materials; nickel alloys; permanent magnets; platinum alloys; point contacts; NiFe-CoPt; ballistic magnetoresistance; current-driven resistance change; domain wall pinning; free area; hard magnetic film; magnetic junction; nanoconstriction; nanoscale point contact; pinned area; spin transfer effect; Anisotropic magnetoresistance; Ballistic magnetoresistance; Current measurement; Electrical resistance measurement; Ion beams; Magnetic field measurement; Magnetic films; Milling; Nickel; Tellurium;

fLanguage

English

Publisher

ieee

Conference_Titel

Magnetics Conference, 2006. INTERMAG 2006. IEEE International

Conference_Location

San Diego, CA

Print_ISBN

1-4244-1479-2

Type

conf

DOI

10.1109/INTMAG.2006.376337

Filename

4262046