Title :
Temperature compensation technique of GaAs FET by rotating the gate orientation
Author :
Furukawa, H. ; Tanaka, T. ; Fukui, T. ; Tateoka, K. ; Nagata, S. ; Ueda, D.
Author_Institution :
Electron. Res. Lab., Matsushita Electron. Corp., Osaka, Japan
Abstract :
It is well known that GaAs power FET occasionally shows thermal runaway. There are some explanations about this effect, such as increase of leakage current and lowering the potential barrier of the gate as the increase of temperature. We found such effect is closely related to the gate orientation for the first time. Based on this characteristics of GaAs FET, we demonstrate temperature compensation technique of GaAs power amplifier just by rotating the gate orientation of the FET.
Keywords :
III-V semiconductors; compensation; gallium arsenide; power field effect transistors; GaAs; GaAs power FET; gate orientation; leakage current; potential barrier; temperature compensation; thermal runaway; Doping; FETs; Gallium arsenide; Gold; Laboratories; Leakage current; Power amplifiers; Temperature; Thermal stresses; Threshold voltage;
Conference_Titel :
Device Research Conference Digest, 1997. 5th
Conference_Location :
Fort Collins, CO, USA
Print_ISBN :
0-7803-3911-8
DOI :
10.1109/DRC.1997.612479
