Title :
InP based HFET structure grown and processed at very low temperatures below 300/spl deg/C
Author :
Henle, B. ; Kohn, E.
Author_Institution :
Dept. of Electron. Devices & Circuits, Ulm Univ., Germany
Abstract :
We present a new method which allows overgrowth of a fully processed InP optoelectronic component at an extremely low temperature of less than 300/spl deg/C. This includes all processing steps needed for FET fabrication. InP grown at low temperature forms a P/sub In/ anti-site defect, with the first excited state located 120 meV above the conduction band edge. This material is automatically n-type and auto-doped and is therefore a candidate for a active layers such as the FET channel material. The concentration of this P/sub In/ anti-site defects is connected with the growth temperature and V/III flux ratio. Therefore a strong influence of growth temperature on sheet carrier concentration and saturation current is found.
Keywords :
III-V semiconductors; chemical beam epitaxial growth; indium compounds; junction gate field effect transistors; semiconductor growth; semiconductor technology; 300 C; GSMBE overgrowth; InP; InP HFET fabrication; active layer; antisite defect; auto-doping; excited state; low temperature growth; low temperature processing; n-type doping; optoelectronic component; saturation current; sheet carrier concentration; Circuits; Conducting materials; Current density; Electric breakdown; FETs; HEMTs; Indium phosphide; MODFETs; Sheet materials; Temperature;
Conference_Titel :
Device Research Conference Digest, 1997. 5th
Conference_Location :
Fort Collins, CO, USA
Print_ISBN :
0-7803-3911-8
DOI :
10.1109/DRC.1997.612480
