InP based HFET structure grown and processed at very low temperatures below 300/spl deg/C

Author

Henle, B. ; Kohn, E.

Author_Institution

Dept. of Electron. Devices & Circuits, Ulm Univ., Germany

fYear

1997

fDate

23-25 June 1997

Firstpage

74

Lastpage

75

Abstract

We present a new method which allows overgrowth of a fully processed InP optoelectronic component at an extremely low temperature of less than 300/spl deg/C. This includes all processing steps needed for FET fabrication. InP grown at low temperature forms a P/sub In/ anti-site defect, with the first excited state located 120 meV above the conduction band edge. This material is automatically n-type and auto-doped and is therefore a candidate for a active layers such as the FET channel material. The concentration of this P/sub In/ anti-site defects is connected with the growth temperature and V/III flux ratio. Therefore a strong influence of growth temperature on sheet carrier concentration and saturation current is found.

Keywords

III-V semiconductors; chemical beam epitaxial growth; indium compounds; junction gate field effect transistors; semiconductor growth; semiconductor technology; 300 C; GSMBE overgrowth; InP; InP HFET fabrication; active layer; antisite defect; auto-doping; excited state; low temperature growth; low temperature processing; n-type doping; optoelectronic component; saturation current; sheet carrier concentration; Circuits; Conducting materials; Current density; Electric breakdown; FETs; HEMTs; Indium phosphide; MODFETs; Sheet materials; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference Digest, 1997. 5th

Conference_Location

Fort Collins, CO, USA

Print_ISBN

0-7803-3911-8

Type

conf

DOI

10.1109/DRC.1997.612480

Filename

612480