Experimental and simulation study of Cu-Al NOL for CCP-CPP-GMR spin-valve

Author

Kim, Y. ; Soh, J. ; Kim, S. ; Lee, K. ; Chung, Y. ; Kawasaki, S. ; Miyake, K. ; Doi, M. ; Sahashi, M.

Author_Institution

Korea Univ., Seoul

fYear

2006

fDate

8-12 May 2006

Firstpage

620

Lastpage

620

Abstract

In this study, we introduce the energy application such as annealing on the Al as deposition state and from molecular dynamics (MD) simulations, the details of atomic configurations for Al atoms on Cu(l 11) surface were investigated. Using this method we can control the size of the Al grains, and, hence, the CCP phenomena can be controlled and improved.The current-perpendicular-to-plane giant magnetoresistance (CPP-GMR) effect has been greatly attracted for its application to ultra high density storage devices.

Keywords

aluminium; annealing; copper; giant magnetoresistance; grain size; magnetic multilayers; magnetic thin films; molecular dynamics method; oxidation; spin valves; CCP-CPP-GMR spin-valve; Cu; Cu-Al; MD simulations; annealing; atomic configurations; current-perpendicular-to-plane giant magnetoresistance effect; grain size; high density storage devices; magnetic multilayer; molecular dynamics simulations; oxidation; thin film; Annealing; Atomic layer deposition; Giant magnetoresistance; Materials science and technology; Oxidation; Rough surfaces; Size control; Substrates; Surface morphology; Surface roughness;

fLanguage

English

Publisher

ieee

Conference_Titel

Magnetics Conference, 2006. INTERMAG 2006. IEEE International

Conference_Location

San Diego, CA

Print_ISBN

1-4244-1479-2

Type

conf

DOI

10.1109/INTMAG.2006.376344

Filename

4262053