DocumentCode
2944525
Title
Ru/NiFeX/Si seedlayer to attain finer grains in CoCrPt-SiO2 perpendicular magnetic recording layer
Author
Kong, S. ; Kim, H. ; Lee, H. ; Oh, H. ; Kim, Y.
Author_Institution
Samsung Inst.of Technol., Yongin
fYear
2006
fDate
8-12 May 2006
Firstpage
627
Lastpage
627
Abstract
In this study, we propose thin NiFeX/Si seedlayer for getting good crystallographic structure as well as finer grains of thin Ru layer. However, relatively thick thickness in the Ru layer deposited onto bcc-like thin Ta layer is needed for attaining the required crystallographic properties. Such thick intermediate layer causes to degrade the recording performances owing to deteriorated writing field gradient.
Keywords
interface roughness; iron alloys; nickel alloys; perpendicular magnetic recording; ruthenium; silicon; CoCrPt-SiO2; Ru-NiFe-Si; crystallographic orientation; crystallographic structure; interface roughness; perpendicular magnetic recording layer; writing field gradient; Amorphous materials; Crystallography; Degradation; Disk recording; Glass; Laboratories; Microstructure; Perpendicular magnetic recording; Writing; X-ray scattering;
fLanguage
English
Publisher
ieee
Conference_Titel
Magnetics Conference, 2006. INTERMAG 2006. IEEE International
Conference_Location
San Diego, CA
Print_ISBN
1-4244-1479-2
Type
conf
DOI
10.1109/INTMAG.2006.376351
Filename
4262060
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