DocumentCode
2944576
Title
Polarization switching in vertical-cavity surface emitting lasers observed at constant active region temperature
Author
Chilla, J.L.A. ; Martin-Regalado, J. ; Rocca, J.J. ; Brusenbach, P.
Author_Institution
Dept. of Electr. Eng., Colorado State Univ., Fort Collins, CO, USA
fYear
1997
fDate
23-25 June 1997
Firstpage
106
Lastpage
107
Abstract
We report a systematic study of the polarization switching behavior during single mode emission in gain-guided VCSELs. An explanation for polarization switching in VCSELs has been offered based on the fact that self heating of the devices by the injected current changes the relative spectral alignment between the laser gain and the cavity resonances of nondegenerate polarization states. A theoretical model including magnetic sub-levels of the conduction and heavy-hole valence bands in a quantum-well VCSEL predicts additional polarization switching mechanisms that occur even when the active region temperature is kept constant. We show experimental evidence of such polarization switching at constant active region temperature. The lasers used in this study are proton-implanted AlGaAs/GaAs multiple quantum well VCSELs on a linear array of devices with active region diameter of 15 /spl mu/m and top contact window diameter of 12 /spl mu/m, operating around 850 nm.
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; laser cavity resonators; light polarisation; quantum well lasers; surface emitting lasers; 12 micron; 15 micron; 850 nm; AlGaAs-GaAs; cavity resonances; constant active region temperature; gain-guided VCSELs; heavy-hole valence bands; injected current; laser gain; linear array; magnetic sub-levels; multiple quantum well VCSELs; nondegenerate polarization states; polarization switching; proton-implanted lasers; relative spectral alignment; self heating; single mode emission; top contact window diameter; vertical-cavity surface emitting lasers; Heating; Laser modes; Laser theory; Laser transitions; Magnetic resonance; Optical polarization; Quantum well lasers; Surface emitting lasers; Temperature; Vertical cavity surface emitting lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Device Research Conference Digest, 1997. 5th
Conference_Location
Fort Collins, CO, USA
Print_ISBN
0-7803-3911-8
Type
conf
DOI
10.1109/DRC.1997.612492
Filename
612492
Link To Document