Title :
Virtual metrology for plasma particle in plasma etching equipment
Author_Institution :
Matsushita Electr. Ind. Co., Ltd., Toyama
Abstract :
Virtual metrology for a plasma particle in plasma etching equipment is described in this paper for the first time. No direct measurement of plasma particles is carried out by an inspection tool but the generation of plasma particles can be predicted by detecting plasma density change indirectly measured using an equipment monitoring tool. It is found that the plasma density change can be detected by several equipment parameters like self-bias voltage using PLS analysis. The correlation coefficient of 0.75 is obtained between measured number of particles and predicted number of particles by a virtual parameter. It is demonstrated that the virtual parameter generated several parameters is useful as virtual metrology for a plasma particle.
Keywords :
integrated circuit manufacture; integrated circuit measurement; plasma density; semiconductor device manufacture; semiconductor device measurement; sputter etching; virtual instrumentation; PLS analysis; plasma density change; plasma etching equipment; plasma particle measurement; self-bias voltage; semiconductor manufacturing; virtual metrology; Etching; Metrology; Plasma applications;
Conference_Titel :
Semiconductor Manufacturing, 2007. ISSM 2007. International Symposium on
Conference_Location :
Santa Clara, CA
Print_ISBN :
978-1-4244-1141-2
Electronic_ISBN :
1523-553X
DOI :
10.1109/ISSM.2007.4446835