• DocumentCode
    2944666
  • Title

    Virtual metrology for plasma particle in plasma etching equipment

  • Author

    Imai, Shin-ichi

  • Author_Institution
    Matsushita Electr. Ind. Co., Ltd., Toyama
  • fYear
    2007
  • fDate
    15-17 Oct. 2007
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    Virtual metrology for a plasma particle in plasma etching equipment is described in this paper for the first time. No direct measurement of plasma particles is carried out by an inspection tool but the generation of plasma particles can be predicted by detecting plasma density change indirectly measured using an equipment monitoring tool. It is found that the plasma density change can be detected by several equipment parameters like self-bias voltage using PLS analysis. The correlation coefficient of 0.75 is obtained between measured number of particles and predicted number of particles by a virtual parameter. It is demonstrated that the virtual parameter generated several parameters is useful as virtual metrology for a plasma particle.
  • Keywords
    integrated circuit manufacture; integrated circuit measurement; plasma density; semiconductor device manufacture; semiconductor device measurement; sputter etching; virtual instrumentation; PLS analysis; plasma density change; plasma etching equipment; plasma particle measurement; self-bias voltage; semiconductor manufacturing; virtual metrology; Etching; Metrology; Plasma applications;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Manufacturing, 2007. ISSM 2007. International Symposium on
  • Conference_Location
    Santa Clara, CA
  • ISSN
    1523-553X
  • Print_ISBN
    978-1-4244-1141-2
  • Electronic_ISBN
    1523-553X
  • Type

    conf

  • DOI
    10.1109/ISSM.2007.4446835
  • Filename
    4446835