Title :
High gain 4H-SiC static induction transistors using novel sub-micron airbridging
Author :
Siergiej, R.R. ; Morse, A.W. ; Esker, P.M. ; Smith, T.J. ; Bojko, R.J. ; Rowland, L.B. ; Clarke, R.C.
Author_Institution :
Northrop Grumman Sci. & Technol. Center, Pittsburgh, PA, USA
Abstract :
For the first time, high gain 4H-SiC static induction transistors (SITs) have been fabricated using a sub-micron source airbridging technique. These devices exhibit record 15 dB small signal gain at 3 GHz. This represents the highest gain yet reported for a SIT structure in any semiconductor.
Keywords :
Ge-Si alloys; semiconductor materials; semiconductor technology; static induction transistors; 15 dB; 3 GHz; 4H-SiC static induction transistor; SiC; fabrication; semiconductor; small signal gain; submicron source airbridging; Degradation; Dielectric measurements; Gain measurement; Packaging; Parasitic capacitance; Performance gain; Silicon carbide; Temperature; Thermal conductivity; Voltage;
Conference_Titel :
Device Research Conference Digest, 1997. 5th
Conference_Location :
Fort Collins, CO, USA
Print_ISBN :
0-7803-3911-8
DOI :
10.1109/DRC.1997.612502
