DocumentCode
2944901
Title
Optical emission during the plasma etch for process control of the litho-etch bias
Author
Altamirano, Efraín ; Kunnen, Eddy ; Werner, Boullart
Author_Institution
IMEC, Leuven
fYear
2007
fDate
15-17 Oct. 2007
Firstpage
1
Lastpage
3
Abstract
In this work we present the suitability of using the optical emission spectroscopy (OES) as real-time monitoring of the reactive ion etching (RLE) process. Selecting the proper wavelength (520 nm), we found that the OES monitoring is more reliable than the typical etch rate statistical process control (SPC). In this paper we discuss our experience of using in-situ and ex-situ SPC´s to monitor the SiOC (hard mask) etching and trimming.
Keywords
lithography; masks; photoluminescence; process control; process monitoring; sputter etching; visible spectra; PC-P-152; hard mask; litho-etch bias ISSM paper; optical emission spectroscopy; plasma etch; process control; reactive ion etching process; trimming; wavelength 520 nm; Condition monitoring; Costs; Erbium; Etching; Optical recording; Plasma applications; Process control; Silicon on insulator technology; Stimulated emission; Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Manufacturing, 2007. ISSM 2007. International Symposium on
Conference_Location
Santa Clara, CA
ISSN
1523-553X
Print_ISBN
978-1-4244-1142-9
Electronic_ISBN
1523-553X
Type
conf
DOI
10.1109/ISSM.2007.4446848
Filename
4446848
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