Title :
Optical emission during the plasma etch for process control of the litho-etch bias
Author :
Altamirano, Efraín ; Kunnen, Eddy ; Werner, Boullart
Author_Institution :
IMEC, Leuven
Abstract :
In this work we present the suitability of using the optical emission spectroscopy (OES) as real-time monitoring of the reactive ion etching (RLE) process. Selecting the proper wavelength (520 nm), we found that the OES monitoring is more reliable than the typical etch rate statistical process control (SPC). In this paper we discuss our experience of using in-situ and ex-situ SPC´s to monitor the SiOC (hard mask) etching and trimming.
Keywords :
lithography; masks; photoluminescence; process control; process monitoring; sputter etching; visible spectra; PC-P-152; hard mask; litho-etch bias ISSM paper; optical emission spectroscopy; plasma etch; process control; reactive ion etching process; trimming; wavelength 520 nm; Condition monitoring; Costs; Erbium; Etching; Optical recording; Plasma applications; Process control; Silicon on insulator technology; Stimulated emission; Testing;
Conference_Titel :
Semiconductor Manufacturing, 2007. ISSM 2007. International Symposium on
Conference_Location :
Santa Clara, CA
Print_ISBN :
978-1-4244-1142-9
Electronic_ISBN :
1523-553X
DOI :
10.1109/ISSM.2007.4446848
