DocumentCode :
2945121
Title :
Low contact-resistance metallization process for a nickel self-aligned contact of beyond 65nm node CMOS
Author :
Futase, Takuya ; Hashikawa, Naoto ; Hayashi, Takeshi ; Tobimatsu, Hiroshi ; Yamamoto, Hirohiko ; Kozawa, Hidehiko
Author_Institution :
Kozawa Renesas Technol. Corp.
fYear :
2007
fDate :
15-17 Oct. 2007
Firstpage :
1
Lastpage :
4
Abstract :
We address contact plug structure with low resistance applicable to NiSi system. It consists of thin barrier layer, prepared by NH3 plasma nitrization of PE-TiCU CVD Ti (PE-TiN/Ti) at process temperature of 450degC, and W-plug with B2H6 based nucleation layer. This process enables us to reduce contact resistance down to 50% without "volcano" type defect issues due to WF6 attacking.
Keywords :
CMOS integrated circuits; CVD coatings; ammonia; boron compounds; contact resistance; integrated circuit metallisation; nickel; nucleation; semiconductor thin films; silicon; B2H6; CMOS; CVD; NH3; NiSi; contact plug structure; low contact-resistance metallization process; nucleation layer; plasma nitrization; self-aligned contact; size 65 nm; thin barrier layer; CMOS process; Conductivity; Contact resistance; Kelvin; Metallization; Nickel; Plasma temperature; Plugs; Surface resistance; Tin;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Manufacturing, 2007. ISSM 2007. International Symposium on
Conference_Location :
Santa Clara, CA
ISSN :
1523-553X
Print_ISBN :
978-1-4244-1142-9
Electronic_ISBN :
1523-553X
Type :
conf
DOI :
10.1109/ISSM.2007.4446862
Filename :
4446862
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2945121
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