Low contact-resistance metallization process for a nickel self-aligned contact of beyond 65nm node CMOS

Author

Futase, Takuya ; Hashikawa, Naoto ; Hayashi, Takeshi ; Tobimatsu, Hiroshi ; Yamamoto, Hirohiko ; Kozawa, Hidehiko

Author_Institution

Kozawa Renesas Technol. Corp.

fYear

2007

fDate

15-17 Oct. 2007

Firstpage

1

Lastpage

4

Abstract

We address contact plug structure with low resistance applicable to NiSi system. It consists of thin barrier layer, prepared by NH₃ plasma nitrization of PE-TiCU CVD Ti (PE-TiN/Ti) at process temperature of 450degC, and W-plug with B₂H₆ based nucleation layer. This process enables us to reduce contact resistance down to 50% without "volcano" type defect issues due to WF₆ attacking.

Keywords

CMOS integrated circuits; CVD coatings; ammonia; boron compounds; contact resistance; integrated circuit metallisation; nickel; nucleation; semiconductor thin films; silicon; B₂H₆; CMOS; CVD; NH₃; NiSi; contact plug structure; low contact-resistance metallization process; nucleation layer; plasma nitrization; self-aligned contact; size 65 nm; thin barrier layer; CMOS process; Conductivity; Contact resistance; Kelvin; Metallization; Nickel; Plasma temperature; Plugs; Surface resistance; Tin;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Manufacturing, 2007. ISSM 2007. International Symposium on

Conference_Location

Santa Clara, CA

ISSN

1523-553X

Print_ISBN

978-1-4244-1142-9

Electronic_ISBN

1523-553X

Type

conf

DOI

10.1109/ISSM.2007.4446862

Filename

4446862