800W UHF SiC SIT transistor for radar applications

Author

Shi, Tiefeng ; Mallinger, Mike ; Leverich, Lyle ; Chang, Jerry ; Leader, Charlie ; Caballero, Mar

Author_Institution

Microsemi Corp. Santa Clara, CA 95051 USA

fYear

2008

fDate

15-20 June 2008

Firstpage

69

Lastpage

72

Abstract

The performance of an 800 Watt SiC SIT device using state of the art silicon carbide technology is described. Operating under pulsed RF conditions of 300 uS Pulse Width, 10% Duty Cycle, it can deliver 800 Watts peak power at 96 Volts. More than 50% efficiency and 9 dB gain are attained over the bandwidth of 400-450 MHz. The power density is 3.1 Watt/Mil. Thermal resistance is 0.14degC/W. The junction temperature remains below 170degC at a flange temperature of 70degC. This combination of high power density and high voltage operation makes these new generation devices ideally suited for transmitter designs in UHF Radar systems.

Keywords

UHF field effect transistors; power transistors; radar; silicon compounds; static induction transistors; wide band gap semiconductors; SiC; UHF SIT transistor; UHF radar systems; frequency 400 MHz to 450 MHz; power 800 W; pulsed RF condition; radar application; silicon carbide technology; temperature 70 C; thermal resistance; voltage 96 V; Bandwidth; Flanges; Gain; Radar applications; Radio frequency; Silicon carbide; Space vector pulse width modulation; Temperature; Thermal resistance; Voltage; High Power Transistor; Radar applications; SIT; UHF;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2008 IEEE MTT-S International

Conference_Location

Atlanta, GA

ISSN

0149-645X

Print_ISBN

978-1-4244-1780-3

Electronic_ISBN

0149-645X

Type

conf

DOI

10.1109/MWSYM.2008.4633105

Filename

4633105