Title :
800W UHF SiC SIT transistor for radar applications
Author :
Shi, Tiefeng ; Mallinger, Mike ; Leverich, Lyle ; Chang, Jerry ; Leader, Charlie ; Caballero, Mar
Author_Institution :
Microsemi Corp. Santa Clara, CA 95051 USA
Abstract :
The performance of an 800 Watt SiC SIT device using state of the art silicon carbide technology is described. Operating under pulsed RF conditions of 300 uS Pulse Width, 10% Duty Cycle, it can deliver 800 Watts peak power at 96 Volts. More than 50% efficiency and 9 dB gain are attained over the bandwidth of 400-450 MHz. The power density is 3.1 Watt/Mil. Thermal resistance is 0.14degC/W. The junction temperature remains below 170degC at a flange temperature of 70degC. This combination of high power density and high voltage operation makes these new generation devices ideally suited for transmitter designs in UHF Radar systems.
Keywords :
UHF field effect transistors; power transistors; radar; silicon compounds; static induction transistors; wide band gap semiconductors; SiC; UHF SIT transistor; UHF radar systems; frequency 400 MHz to 450 MHz; power 800 W; pulsed RF condition; radar application; silicon carbide technology; temperature 70 C; thermal resistance; voltage 96 V; Bandwidth; Flanges; Gain; Radar applications; Radio frequency; Silicon carbide; Space vector pulse width modulation; Temperature; Thermal resistance; Voltage; High Power Transistor; Radar applications; SIT; UHF;
Conference_Titel :
Microwave Symposium Digest, 2008 IEEE MTT-S International
Conference_Location :
Atlanta, GA
Print_ISBN :
978-1-4244-1780-3
Electronic_ISBN :
0149-645X
DOI :
10.1109/MWSYM.2008.4633105
