Mode locked Nd:glass fiber laser using intensity dependent defocusing by low-temperature-grown GaAs

Author

Leitner, M. ; Glas, P. ; Wrage, M. ; Sandrock, T. ; Legall, H. ; Heuer, A. ; Apostolopoulos, G. ; Herfort, Jens ; Daweritz, L.

Author_Institution

Max-Planck-Inst., Berlin, Germany

fYear

2000

fDate

10-15 Sept. 2000

Abstract

Summary form only given. In recent years the development of semiconductor devices like SESAMs has led to a substantial progress in the generation of ultrashort pulses in solid-state lasers. The use of semiconductor materials makes it possible to combine strong nonlinear properties with short recombination times. In this work we describe a novel mode locking device based on low-temperature-grown GaAs (LT-GaAs) combined with a double-clad silica fiber laser being doped with Nd/sub 2/O/sub 3/ (1300 ppm) emitting at 1.06 /spl mu/m. The mode locking mechanism is based on the intensity dependent defocusing in the LT-GaAs.

Keywords

III-V semiconductors; fibre lasers; gallium arsenide; laser mode locking; neodymium; 1.06 micron; GaAs; Nd:glass fiber laser; SiO/sub 2/:Nd; double-clad silica fiber laser; intensity dependent defocusing; low-temperature-grown GaAs; mode locking device; nonlinear properties; recombination time; semiconductor material; solid-state laser; ultrashort pulse generation; Fiber lasers; Gallium arsenide; Laser mode locking; Optical fiber devices; Optical pulse generation; Radiative recombination; Semiconductor devices; Semiconductor lasers; Semiconductor materials; Solid lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Europe, 2000. Conference Digest. 2000 Conference on

Conference_Location

Nice

Print_ISBN

0-7803-6319-1

Type

conf

DOI

10.1109/CLEOE.2000.909669

Filename

909669