Title :
Spacer etch optimization on high density memory products to eliminate core leakage failures
Author :
Dharmarajan, Easwar ; Song, Shengnian ; Mclaughlin, Lenore ; Guan, John ; Gazda, Jerzy ; Lin, Emma ; Qi, Wen-Jie ; Shiraiwa, Hidehiko ; Hussey, James ; Lansford, Jeremy ; Banerjee, Basab
Author_Institution :
Spansion LLC, Austin
Abstract :
Through this work, we present a core leakage failure mechanism in our 90 nm high density memory products which was found to be related to etch process loading sensitivity to high density. Process optimization was done to fix the problem while maintaining sufficient etch margin against stringers.
Keywords :
etching; flash memories; integrated circuit manufacture; leakage currents; core leakage failures; etch process loading sensitivity; high density memory circuits; process optimization; size 90 nm; spacer etch optimization; Cobalt; Current measurement; Density measurement; Etching; Failure analysis; Flash memory; Manufacturing industries; Silicides; Testing; Voltage;
Conference_Titel :
Semiconductor Manufacturing, 2007. ISSM 2007. International Symposium on
Conference_Location :
Santa Clara, CA
Print_ISBN :
978-1-4244-1142-9
Electronic_ISBN :
1523-553X
DOI :
10.1109/ISSM.2007.4446867
