• DocumentCode
    2945212
  • Title

    Spacer etch optimization on high density memory products to eliminate core leakage failures

  • Author

    Dharmarajan, Easwar ; Song, Shengnian ; Mclaughlin, Lenore ; Guan, John ; Gazda, Jerzy ; Lin, Emma ; Qi, Wen-Jie ; Shiraiwa, Hidehiko ; Hussey, James ; Lansford, Jeremy ; Banerjee, Basab

  • Author_Institution
    Spansion LLC, Austin
  • fYear
    2007
  • fDate
    15-17 Oct. 2007
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    Through this work, we present a core leakage failure mechanism in our 90 nm high density memory products which was found to be related to etch process loading sensitivity to high density. Process optimization was done to fix the problem while maintaining sufficient etch margin against stringers.
  • Keywords
    etching; flash memories; integrated circuit manufacture; leakage currents; core leakage failures; etch process loading sensitivity; high density memory circuits; process optimization; size 90 nm; spacer etch optimization; Cobalt; Current measurement; Density measurement; Etching; Failure analysis; Flash memory; Manufacturing industries; Silicides; Testing; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Manufacturing, 2007. ISSM 2007. International Symposium on
  • Conference_Location
    Santa Clara, CA
  • ISSN
    1523-553X
  • Print_ISBN
    978-1-4244-1142-9
  • Electronic_ISBN
    1523-553X
  • Type

    conf

  • DOI
    10.1109/ISSM.2007.4446867
  • Filename
    4446867
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2945212