Title :
Extending HDP for STI fill to 45nm with IPM
Author :
Wang, Anchuan ; Bloking, Jason ; Wang, Linlin ; Vellaikal, Manoj ; Jeon, Jin Ho ; Lee, Young S. ; Whitesell, Harry S.
Author_Institution :
Appl. Mater. Inc., Santa Clara
Abstract :
A novel gap fill approach, Integrated Profile Modulation (IPM), with repeating deposition and etch cycles is developed to extend HDP for complete gap fill to 45 nm node and beyond, with established HDP CVD film properties and integration. In this paper, the key aspects of the IPM process, deposition, etch, in-film fluorine and aluminum control are discussed to provide better understanding on gap fill optimization and manufacturing capability.
Keywords :
coating techniques; etching; isolation technology; semiconductor device manufacture; deposition; etch cycles; gap fill optimization; high dencity plasma; integrated profile modulation; shallow trench isolation; size 45 nm; Argon; Dielectrics; Etching; Helium; Hydrogen; Plasma applications; Plasma sources; Radio frequency; Sputtering; Switches;
Conference_Titel :
Semiconductor Manufacturing, 2007. ISSM 2007. International Symposium on
Conference_Location :
Santa Clara, CA
Print_ISBN :
978-1-4244-1142-9
Electronic_ISBN :
1523-553X
DOI :
10.1109/ISSM.2007.4446868
