DocumentCode :
2945237
Title :
A statistical method for the characterization of bimodal electromigration distributions
Author :
Hau-Riege, Christine ; Lee, EunJoo ; Thierbach, Steffi ; Marathe, Amit ; Kittler, Richard
Author_Institution :
AMD, Sunnyvale
fYear :
2007
fDate :
15-17 Oct. 2007
Firstpage :
1
Lastpage :
3
Abstract :
We have developed a statistical method for analyzing bimodal electromigration distributions based on experiment and failure analysis. This method assesses whether a distribution is bimodal, and if so, determines the mode of each individual fail through a least-squares method, so that the best lognormal fit is determined for each mode. Once the modes have been separated, the electromigration performance for each mode can be explicitly determined in the usual manner. Unlike methods based on maximum likelihood estimation, this method is robust for small samples sizes, in which random subsets of a large dataset lead to statistically similar results. Further, since this method has been verified through failure analysis for multiple distributions, extensive failure analysis work can be bypassed in order to separate the entire distribution into two modes.
Keywords :
electromigration; failure analysis; least squares approximations; statistical analysis; bimodal electromigration distributions; failure analysis; least-squares method; statistical method; Current density; Electromigration; Electrons; Failure analysis; Maximum likelihood estimation; Robust control; Robustness; Size control; Statistical analysis; Testing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Manufacturing, 2007. ISSM 2007. International Symposium on
Conference_Location :
Santa Clara, CA
ISSN :
1523-553X
Print_ISBN :
978-1-4244-1142-9
Electronic_ISBN :
1523-553X
Type :
conf
DOI :
10.1109/ISSM.2007.4446869
Filename :
4446869
Link To Document :
بازگشت