Title :
An AlGaN/GaN class-S amplifier for RF-communication signals
Author :
Leberer, Ralf ; Reber, Rolf ; Oppermann, Martin
Author_Institution :
EADS Deutschland GmbH, 89077 Ulm, Germany
Abstract :
A Gallium-Nitride (GaN) current switched class-S amplifier for 450 MHz RF-signals is presented. A FPGA board is used to generate a band-pass delta sigma sequence with 1800 Mbit/s. This quasi digital signal is amplified to the required gate voltage swing for the HEMTs using a commercial available preamplifier. The AlGaN/GaN-HEMTs are driven in a high efficient switch mode. Linearity is preserved using the class-S architecture. Limits of this classical amplifier architecture are shown and discussed. Simulation results are presented and the realized class-S demonstrator is shown.
Keywords :
aluminium compounds; field programmable gate arrays; gallium compounds; power amplifiers; radiofrequency amplifiers; AlGaN-GaN; FPGA board; HEMT; RF-communication signals; band-pass delta sigma sequence; bit rate 1800 Mbit/s; current switched class-S amplifier; frequency 450 MHz; power amplifiers; Aluminum gallium nitride; Gallium nitride; Linearity; Power amplifiers; Pulse amplifiers; Pulse modulation; Radiofrequency amplifiers; Signal generators; Switches; Voltage; GaN; HF radio communication; Switching amplifier; class-S amplifier; gallium nitride; power amplifiers;
Conference_Titel :
Microwave Symposium Digest, 2008 IEEE MTT-S International
Conference_Location :
Atlanta, GA
Print_ISBN :
978-1-4244-1780-3
Electronic_ISBN :
0149-645X
DOI :
10.1109/MWSYM.2008.4633109
