High power THz radiation from an optimized InAs emitter in a magnetic field irradiated with femtosecond laser pulses

Author

Kawahata, E. ; Ono, Shintaro ; Yano, Takao ; Ohtake, H. ; Sarukura, N. ; Tsukamoto, Tadaaki

Author_Institution

Inst. for Molecular Sci., Okazaki, Japan

fYear

2000

fDate

10-15 Sept. 2000

Abstract

Summary form only given. We have determined the optimum geometry to generate intense THz radiation using an InAs emitter. A modelocked Ti:sapphire laser delivered 100-fsec pulses in a 1-W average power for excitation. The sample was non-doped bulk InAs with a (100) surface. The surface of the InAs was placed parallel to the magnetic field up to 1.7 T by electromagnet and the excitation laser irradiated the sample with a 1-mm diameter beam. The THz radiation was detected by a liquid-helium-cooled InSb bolometer, and the THz-radiation spectra were taken by a polarizing Michelson interferometer.

Keywords

III-V semiconductors; high-speed optical techniques; indium compounds; infrared sources; submillimetre wave generation; (100) surface; 1.7 T; InAs; bolometer detection; femtosecond laser pulse irradiated; high power THz radiation; magnetic field; modelocked Ti:sapphire laser; optimized emitter; optimum geometry; undoped bulk InAs; Electromagnets; Geometrical optics; Laser beams; Laser excitation; Laser modes; Magnetic fields; Optical pulses; Power lasers; Radiation detectors; Surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Europe, 2000. Conference Digest. 2000 Conference on

Conference_Location

Nice

Print_ISBN

0-7803-6319-1

Type

conf

DOI

10.1109/CLEOE.2000.909670

Filename

909670