DocumentCode
2945293
Title
Large spontaneous shape memory and magnetic-field-induced strain in Ni51Mn25.5Ga23.5 single crystals
Author
Cui, Y. ; Chen, J. ; Wu, G.
Author_Institution
Chongqing Normal Univ., Chongqing
fYear
2006
fDate
8-12 May 2006
Firstpage
673
Lastpage
673
Abstract
Single crystals of Ni51Mn25.5Ga23.5 were grown in [001] direction of parent phase by the Czochralski method. A two-way thermoelastic shape memory with a larger spontaneous strain of 1.62% in the Ni51Mn25.5Ga23.5 crystal, noting without a prestress or an external magnetic field is reported. found. The results are discussed with reference to growth mechanism of single crystals and magnetic anisotropy produced by the preferential orientation of variants.
Keywords
crystal growth from melt; gallium alloys; magnetic anisotropy; magnetomechanical effects; manganese alloys; nickel alloys; shape memory effects; thermoelasticity; Czochralski method; Ni51Mn25.5Ga23.5; magnetic anisotropy; magnetic-field-induced strain; preferential orientation; spontaneous strain; thermoelastic shape memory; Actuators; Capacitive sensors; Crystals; Electrical resistance measurement; Magnetic field induced strain; Magnetic field measurement; Magnetic materials; Physics; Shape memory alloys; Temperature measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Magnetics Conference, 2006. INTERMAG 2006. IEEE International
Conference_Location
San Diego, CA
Print_ISBN
1-4244-1479-2
Type
conf
DOI
10.1109/INTMAG.2006.376397
Filename
4262106
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