High power quantum dot lasers

Summary form only given. QD lasers have decisive advantages compared to QW lasers. The present technology of epitaxial growth of self-organized QDs allows fabricating QD lasers that realize their theoretical benefits. Among those are very low threshold current density, operation in new wavelength ranges for a given substrate and high power operation. We present results on MOCVD and MBE grown high power QD lasers based on InGaAs QDs on GaAs substrate. MOCVD devices demonstrated lasing at 1100 nm with 3.5 W in the pulsed regime. The threshold was 210 A/cm/sup 2/ and the differential efficiency 57%. The saturation value of the spectral power density is 200 MW/nm. Therefore each QD produces about 12.5 nW of external optical power, corresponding to 7/spl times/10/sup 10/ photons/s and an upper limit for the refill time of 14 ps.