DocumentCode :
2945375
Title :
Investigation of PDA process to improve electrical characteristics of HfOxNy High-k dielectric formed by ECR plasma oxidation of HfN
Author :
Ohmi, Shun-ichiro ; Nakano, Yusuke
Author_Institution :
Tokyo Inst. of Technol., Yokohama
fYear :
2007
fDate :
15-17 Oct. 2007
Firstpage :
1
Lastpage :
4
Abstract :
In this paper, post deposition annealing (PDA) processes such as Si wafer covering rapid thermal annealing (SWC-RTA) and rapid cooling process were investigated to improve electrical characteristics of HfOxNy films formed by ECR Ar/O2 plasma oxidation of ultra-thin HfN films. An EOT of 0.96 nm with leakage current density of 0.26 A/cm2 was obtained by utilizing SWC-RTA and rapid cooling. The obtained result shows the smallest equivalent oxide thickness (EOT) for the HfOxNy film formed by ECR plasma process so far.
Keywords :
hafnium compounds; high-k dielectric thin films; rapid thermal annealing; silicon; ECR plasma oxidation; HfN; HfN ISSM paper; HfON; equivalent oxide thickness; high-k dielectric thin films; post deposition annealing; rapid cooling; rapid thermal annealing; silicon wafer; Argon; Cooling; Electric variables; Hafnium oxide; Oxidation; Plasma density; Plasma properties; Rapid thermal annealing; Rapid thermal processing; Semiconductor films;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Manufacturing, 2007. ISSM 2007. International Symposium on
Conference_Location :
Santa Clara, CA
ISSN :
1523-553X
Print_ISBN :
978-1-4244-1142-9
Electronic_ISBN :
1523-553X
Type :
conf
DOI :
10.1109/ISSM.2007.4446875
Filename :
4446875
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2945375
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