Laser processing of doped silicon wafer by the Stealth Dicing

Stealth dicing has outstanding advantages over conventional dicing methods such as blade dicing and laser ablation method. Therefore, stealth dicing is being already used for the wafer manufacturing, and the process started to be spread in the market. In this paper, the relationship between absorption coefficient and resistivity which is the most important property for the stealth dicing were explained. Starting from the case study about the processing phenomenon of wafers with different resistivity, the relationship between resistivity and absorption coefficient was assumed by an equation. The reached beam energy at the focal point was estimated by using absorption coefficient that was calculated from above estimated equation. When the reached beam energy was equal to each other, similar SD layers were generated, however, the separation ability did not only depend on the energy itself.