• DocumentCode
    2945449
  • Title

    Monolithic crossbar MEMS switch matrix

  • Author

    Chan, King Yuk Eric ; Daneshmand, Mojgan ; Mansour, Raafat R. ; Ramer, Rodica

  • Author_Institution
    School of Electrical and Telecommunications Engineering, University of New South Wales, Sydney, Australia
  • fYear
    2008
  • fDate
    15-20 June 2008
  • Firstpage
    129
  • Lastpage
    132
  • Abstract
    This paper presents a novel approach to implement RF MEMS large size switch matrices. The concept is based on the implementation of a crossbar switch matrix and the introduction of unique switch cells that can be easily used to expand the matrix size. A six-mask fabrication process is adapted to fabricate the proposed four-port switch cell as well as the switch matrix samples. The switch cell has two operational states: thru and turn. This allows the cell to be easily integrated in the form of a crossbar switch matrix. Novel series contact cantilever beams have been used to implement the entire structure. The measured results for the entire switch cell show excellent insertion loss of 0.5 dB, return loss of better than -20 dB and isolation of -25 dB for the thru path. The turn state of the switch shows a good performance of 0.4 dB insertion loss, -18 dB return loss and better than -25 dB isolation for the frequency band of interest. A 3 times 3 switch matrix is implemented that shows 98% size reduction in comparison with the previously reported RF MEMS switch matrices.
  • Keywords
    microswitches; radiofrequency integrated circuits; MEMS switch matrix; RF MEMS; loss 0.4 dB; loss 0.5 dB; monolithic crossbar; six-mask fabrication process; Contacts; Fabrication; Frequency; Insertion loss; Loss measurement; Microswitches; Performance loss; Radiofrequency microelectromechanical systems; Structural beams; Switches; MEMS; RF MEMS; dc contact; high isolation; k-band; switch; switch matrix; x-band;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Symposium Digest, 2008 IEEE MTT-S International
  • Conference_Location
    Atlanta, GA
  • ISSN
    0149-645X
  • Print_ISBN
    978-1-4244-1780-3
  • Electronic_ISBN
    0149-645X
  • Type

    conf

  • DOI
    10.1109/MWSYM.2008.4633120
  • Filename
    4633120