DocumentCode
2945802
Title
Reduction of wafer edge induced defect by WEE optimization
Author
Murata, Taiki ; Sato, Masayuki ; Goto, Tsuguo
Author_Institution
Spansion Japan Ltd., Fukushima
fYear
2007
fDate
15-17 Oct. 2007
Firstpage
1
Lastpage
3
Abstract
In this paper, A unique defect caused by inter layer dielectric (ILD) film peeling from wafer edge is reported. The root cause analysis by using wafer edge/bevel inspection tool revealed that the source of the ILD film peeling is residual photoresist at wafer edge. Wafer edge exposure (WEE) condition was optimized to suppress the resist residue and consequent film peeling from wafer edge.
Keywords
dielectric thin films; semiconductor device manufacture; WEE optimization; inter layer dielectric film; residual photoresist; root cause analysis; wafer edge exposure; wafer edge induced defect; wafer edge-bevel inspection tool; Delamination; Dielectric materials; Etching; Inspection; Optical films; Optical materials; Optical scattering; Resists; Semiconductor films; Tungsten;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Manufacturing, 2007. ISSM 2007. International Symposium on
Conference_Location
Santa Clara, CA
ISSN
1523-553X
Print_ISBN
978-1-4244-1142-9
Electronic_ISBN
1523-553X
Type
conf
DOI
10.1109/ISSM.2007.4446900
Filename
4446900
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