• DocumentCode
    2945835
  • Title

    Generation of spatial solitons in narrow-gap semiconductors

  • Author

    Skarka, V. ; Berezhiani, V.I.

  • Author_Institution
    Lab. POMA, Angers Univ., France
  • fYear
    2000
  • fDate
    10-15 Sept. 2000
  • Abstract
    Summary form only. Stable spatial solitons with two transverse dimensions can exist in materials characterized by a saturable nonlinearity that exactly compensates for the diffraction. Narrow-gap semiconductors, in particular III-V alloys with a small effective mass of conduction electrons, exhibits a large degree of nonparabolicity. In fact, in some narrow-gap semiconductors like InSb, the dispersion relation mimics that of a relativistic electron with a small effective mass, and with an effective "speed of light" several order smaller than the speed of light in a vacuum. In response to a laser pulse, due to the velocity-dependent mass the conduction electrons can simulate the dynamics of a relativistic plasma, at a pulse intensity which is a tiny fraction of the intensity required to create similar conditions in a normal gaseous plasma.
  • Keywords
    effective mass; laser beam effects; narrow band gap semiconductors; optical solitons; semiconductor plasma; dispersion relation; effective mass; laser pulse; narrow-gap semiconductors; pulse intensity; saturable nonlinearity; spatial solitons; Conducting materials; Diffraction; Dispersion; Effective mass; Electrons; Gas lasers; III-V semiconductor materials; Optical pulses; Plasma simulation; Solitons;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics Europe, 2000. Conference Digest. 2000 Conference on
  • Conference_Location
    Nice
  • Print_ISBN
    0-7803-6319-1
  • Type

    conf

  • DOI
    10.1109/CLEOE.2000.909704
  • Filename
    909704