• DocumentCode
    2945852
  • Title

    Effect of Ar pressure on switching field distribution of CoPtCr-SiO2 perpendicular media

  • Author

    Vokoun, D. ; Lai, C. ; Lin, M. ; Jiang, R.

  • Author_Institution
    Nat. Tsing-hua Univ., Hsinchu
  • fYear
    2006
  • fDate
    8-12 May 2006
  • Firstpage
    700
  • Lastpage
    700
  • Abstract
    In the present study, the switching field distribution (SFD) of the Tb/Pt/Ru/CoPtCr-SiO2 perpendicular media has been studied in relation to the Ar pressure at which the recording layer was deposited. The goal of the present study is to correlate the SFDs of the Tb/Pt/Ru/CoPtCr-SiO2 media with their intergranular exchange coupling and their grain size distribution.
  • Keywords
    chromium alloys; cobalt alloys; grain size; magnetic switching; perpendicular magnetic anisotropy; perpendicular magnetic recording; platinum; platinum alloys; ruthenium; silicon compounds; terbium; SFD; Tb-Pt-Ru-CoPtCr-SiO2 - Interface; grain size distribution; intergranular exchange coupling; recording layer; switching field distribution; Amorphous magnetic materials; Amorphous materials; Anisotropic magnetoresistance; Argon; Demagnetization; Grain size; Materials science and technology; Neodymium; Saturation magnetization; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Magnetics Conference, 2006. INTERMAG 2006. IEEE International
  • Conference_Location
    San Diego, CA
  • Print_ISBN
    1-4244-1479-2
  • Type

    conf

  • DOI
    10.1109/INTMAG.2006.376424
  • Filename
    4262133
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2945852