Novel photoconductive detector with buried FIB implanted p-doped stripe

Summary form only. Focused Ion Beam (FIB) implantation is a well-established method for lateral patterning of two-dimensional electron gases. We utilize this technique for direct local doping in semiconductors without masking. Subsequent overgrowth of FIB doped layers or lateral structures by molecular beam epitaxy (MBE) allows the fabrication of buried microstructured doping patterns. This permits the realisation of a variety of new device designs.