DocumentCode
2945966
Title
Novel photoconductive detector with buried FIB implanted p-doped stripe
Author
Vitzethum, M. ; Ruff, M. ; Kiesel, P. ; Malzer, Stefan ; Dohler, Gottfried H. ; Koch, Jurgen ; Wieck, A.D.
Author_Institution
Inst. fur Tech. Phys. I, Erlangen, Germany
fYear
2000
fDate
10-15 Sept. 2000
Abstract
Summary form only. Focused Ion Beam (FIB) implantation is a well-established method for lateral patterning of two-dimensional electron gases. We utilize this technique for direct local doping in semiconductors without masking. Subsequent overgrowth of FIB doped layers or lateral structures by molecular beam epitaxy (MBE) allows the fabrication of buried microstructured doping patterns. This permits the realisation of a variety of new device designs.
Keywords
Hall mobility; epitaxial layers; focused ion beam technology; ion implantation; photodetectors; two-dimensional electron gas; Hall mobility; MBE; buried FIB implanted p-doped stripe; focused ion beam implantation; lateral patterning; lateral structures; local doping; photoconductive detector; semiconductors; two-dimensional electron gases; Detectors; Doping; Electron beams; Epitaxial growth; Fabrication; Gases; Geometry; Ion beams; Molecular beam epitaxial growth; Photoconductivity;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Europe, 2000. Conference Digest. 2000 Conference on
Conference_Location
Nice
Print_ISBN
0-7803-6319-1
Type
conf
DOI
10.1109/CLEOE.2000.909710
Filename
909710
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