DocumentCode :
2946002
Title :
Ultrafast photoconductive switches with current block layers fabricated by using an atomic force microscope
Author :
Itatani, T. ; Kikkawa, H. ; Sugaya, T. ; Matsumoto, Kaname ; Nakagawa, T. ; Yonei, K. ; Sugiyama, Y.
Author_Institution :
Electrotech. Lab., Ibaraki, Japan
fYear :
2000
fDate :
10-15 Sept. 2000
Abstract :
Summary form only. This paper describes the structure and the ultrafast response of insulator-gap photoconductive switches with current block layers.
Keywords :
III-V semiconductors; aluminium compounds; atomic force microscopy; gallium arsenide; photoconducting switches; semiconductor epitaxial layers; GaAs-AlGaAs; atomic force microscope; current block layers; insulator-gap photoconductive switches; ultrafast photoconductive switches; Atomic beams; Atomic layer deposition; Cleaning; Gold; Microwave integrated circuits; Photoconductivity; Solids; Switches;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics Europe, 2000. Conference Digest. 2000 Conference on
Conference_Location :
Nice
Print_ISBN :
0-7803-6319-1
Type :
conf
DOI :
10.1109/CLEOE.2000.909711
Filename :
909711
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2946002
بازگشت