DocumentCode
2946002
Title
Ultrafast photoconductive switches with current block layers fabricated by using an atomic force microscope
Author
Itatani, T. ; Kikkawa, H. ; Sugaya, T. ; Matsumoto, Kaname ; Nakagawa, T. ; Yonei, K. ; Sugiyama, Y.
Author_Institution
Electrotech. Lab., Ibaraki, Japan
fYear
2000
fDate
10-15 Sept. 2000
Abstract
Summary form only. This paper describes the structure and the ultrafast response of insulator-gap photoconductive switches with current block layers.
Keywords
III-V semiconductors; aluminium compounds; atomic force microscopy; gallium arsenide; photoconducting switches; semiconductor epitaxial layers; GaAs-AlGaAs; atomic force microscope; current block layers; insulator-gap photoconductive switches; ultrafast photoconductive switches; Atomic beams; Atomic layer deposition; Cleaning; Gold; Microwave integrated circuits; Photoconductivity; Solids; Switches;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Europe, 2000. Conference Digest. 2000 Conference on
Conference_Location
Nice
Print_ISBN
0-7803-6319-1
Type
conf
DOI
10.1109/CLEOE.2000.909711
Filename
909711
Link To Document