Title :
Highly spin-polarized tunneling in fully epitaxial magnetic tunnel junctions using full-Heusler alloy Co2Cr0.6Fe0.4Al thin film and MgO tunnel barrier
Author :
Marukame, T. ; Ishikawa, T. ; Kijima, H. ; Sekine, W. ; Matsuda, K. ; Uemura, T. ; Yamamoto, M.
Author_Institution :
Hokkaido Univ., Sapporo
Abstract :
In this study, we fabricated fully epitaxial MTJs using a CCFA thin film with an improved film composition and a wedge-shaped MgO tunnel barrier. We then investigated the junctions´ TMR characteristics.The high TMR ratios provided direct evidence of the high spin polarization of full-Heusler alloy CCFA thin films. These results confirm the promise of epitaxial Co-based full-Heusler alloy thin films of Co2Cr0.6Fe0.4Al as a source of highly spin-polarized current in spintronic devices.
Keywords :
Curie temperature; aluminium alloys; chromium alloys; cobalt alloys; interface magnetism; iron alloys; magnesium compounds; magnetic switching; magnetic thin films; magnetic tunnelling; magnetisation; spin polarised transport; Co2Cr0.6Fe0.4Al-MgO; Curie temperatures; current-induced magnetization switching; full-Heusler alloy; fully epitaxial magnetic tunnel junctions; half-metallic ferromagnets; room temperature; spin-polarized current; spin-polarized tunneling; spintronic devices; temperature 293 K to 298 K; thin film; wedge-shaped tunnel barrier; Aluminum alloys; Chromium alloys; Cobalt alloys; Iron alloys; Magnetic films; Magnetic tunneling; Magnetoelectronics; Polarization; Thin film devices; Transistors;
Conference_Titel :
Magnetics Conference, 2006. INTERMAG 2006. IEEE International
Conference_Location :
San Diego, CA
Print_ISBN :
1-4244-1479-2
DOI :
10.1109/INTMAG.2006.376447
