A 70-GHz transformer-peaking broadband amplifier in 0.13-Â¿m CMOS Technology

Author

Jin, Jun-De ; Hsu, Shawn S H

Author_Institution

High-Speed Devices&Integrated Circuits Group (HSDIC) Dept. of Electrical Engineering and Institute of Electronics Engineering, National Tsing Hua University, Hsinchu, Taiwan 300, R.O.C.

fYear

2008

fDate

15-20 June 2008

Firstpage

285

Lastpage

288

Abstract

A 70-GHz broadband amplifier is realized in a 0.13-mum CMOS technology. By using five cascaded common-source stages with the proposed asymmetric transformer peaking technique, the measured bandwidth and gain can reach 70.6 GHz and 10.3 dB respectively under a power consumption (P_DC) of 79.5 mW. With miniaturized transformer design, the core area of the circuit is only ~0.05 mm². Compared with the state-of-the-art CMOS broadband amplifiers, this work achieves the highest gain-bandwidth product (GBW) of 231 GHz and also the highest GBW/P_DC of 2.9 GHz/mW.

Keywords

CMOS analogue integrated circuits; amplification; transformers; wideband amplifiers; CMOS technology; asymmetric transformer peaking technique; bandwidth 70.6 GHz; broadband amplifier; cascaded common-source stages; gain 10.3 dB; gain-bandwidth product; power 79.5 mW; power consumption; Bandwidth; Broadband amplifiers; CMOS technology; Circuit topology; Energy consumption; Frequency; Impedance matching; Inductors; Resistors; Shunt (electrical); Broadband amplifier; CMOS; common-source stage; gain-bandwidth product; transformer peaking;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2008 IEEE MTT-S International

Conference_Location

Atlanta, GA

ISSN

0149-645X

Print_ISBN

978-1-4244-1780-3

Electronic_ISBN

0149-645X

Type

conf

DOI

10.1109/MWSYM.2008.4633159

Filename

4633159