W-band SiGe LNA using unilateral gain peaking

A 91 GHz low-noise amplifier (LNA) using a unilateral gain peaking design technique is presented. Parasitic capacitances from the layout of transistors are exploited in order to frequency shift the peak of Masonpsilas unilateral gain. This methodology enhances amplifier gain performance tremendously without additional power consumption or penalty in noise figure. The LNA was developed in IBMpsilas 8HP 0.12 mum, 200 GHz f_T, SiGe technology. The measured results demonstrate a peak gain of 13 dB, an IIP3 of -5.4 dBm, a noise figure of 5.1 dB with DC power consumption of only 8.1 mW at 91 GHz. The amplifier exhibits a 3-dB gain bandwidth of 16 GHz from 84 - 100 GHz with a minimum gain of 10 dB and an average NF of only 5.5 dB. This device has the highest known reported figure of merit (28.9) for a silicon based W-band LNA.