Tunnel Magnetoresistance Effect in CoFeB/MgO/Heusler Alloys(Co2FeSi, Co2MnSi) Tunnel Junctions

Author

Daibou, T. ; Shinano, M. ; Sakuraba, Y. ; Oogane, M. ; Miyazaki, T.

Author_Institution

Tohoku Univ., Sendai

fYear

2006

fDate

8-12 May 2006

Firstpage

724

Lastpage

724

Abstract

In this study, we investigated the TMR effects in CoFeB/MgO/Heusler alloys (Co₂FeSi and Co₂MnSi) magnetic tunnel junctions. Both Co₂FeSi and Co₂MnSi heusler alloys have half-metallic band structure and high Curie temperature of 1200K and 985K, respectively. Moreover, the lattice mismatch between the Heusler alloys and MgO barrier is relatively small, which indicates that the highly textured Heusler alloys can be grown on the MgO barrier. In addition, it could be noted that spin-fluctuation at finite temperature can reduce spin-polarization of Heusler alloys even though the MgO/Heusler alloys is ideal HMFs at low temperature.

Keywords

Curie temperature; band structure; boron alloys; cobalt alloys; iron alloys; magnesium compounds; silicon alloys; spin polarised transport; tunnelling magnetoresistance; CoFeB-MgO-Co₂FeSi; CoFeB-MgO-Co₂MnSi; Curie temperature; Heusler alloys; half-metallic band structure; lattice mismatch; magnetic tunnel junctions; spin polarization; spin-fluctuation; temperature 1200 K; temperature 985 K; tunnel magnetoresistance effect; Annealing; Electrodes; Giant magnetoresistance; Lattices; Magnetic field measurement; Magnetic materials; Magnetic tunneling; Physics; Temperature dependence; Tunneling magnetoresistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Magnetics Conference, 2006. INTERMAG 2006. IEEE International

Conference_Location

San Diego, CA

Print_ISBN

1-4244-1479-2

Type

conf

DOI

10.1109/INTMAG.2006.376448

Filename

4262157