DocumentCode :
2946338
Title :
Magnetoresistance Effect in a La0.8Bi0.2MnO3/MgO/Co Trilayer Device
Author :
Ogawa, T. ; Shindo, H. ; Takeuchi, H. ; Koizumi, Y.
Author_Institution :
Tokai Univ., Tokai
fYear :
2006
fDate :
8-12 May 2006
Firstpage :
725
Lastpage :
725
Abstract :
The device composed of La0.8Bi0.2MnO3/MgO/Co trilayer (with a tunnnel barrier made of MgO film) as an L1-xBixMnO3 substrate are prepared, and the magnetoresistance effect of the device is examined. Fundamental temperature properties of electrical conduction of the La0.8Bi0.2MnO3/MgO/Co trilayer device as a function of MgO thickness is determined. It was found that the magnetoresistance was about 33% of the maximum value when the MgO film thickness was 2.0 nm and the device shows damped oscillation with increasing MgO film thickness.
Keywords :
bismuth compounds; cobalt; electrical conductivity; ferromagnetic materials; lanthanum compounds; magnesium compounds; magnetoresistance; magnetoresistive devices; thin films; L1-xBixMnO3 substrate; La0.8Bi0.2MnO3-MgO-Co; damped oscillation; electrical conduction; film thickness; magnetoresistance effect; trilayer device; tunnnel barrier; Atmosphere; Bismuth; Colossal magnetoresistance; Current measurement; Electric resistance; Manganese; Powders; Substrates; Sun; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Magnetics Conference, 2006. INTERMAG 2006. IEEE International
Conference_Location :
San Diego, CA
Print_ISBN :
1-4244-1479-2
Type :
conf
DOI :
10.1109/INTMAG.2006.376449
Filename :
4262158
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2946338
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