• DocumentCode
    2946338
  • Title

    Magnetoresistance Effect in a La0.8Bi0.2MnO3/MgO/Co Trilayer Device

  • Author

    Ogawa, T. ; Shindo, H. ; Takeuchi, H. ; Koizumi, Y.

  • Author_Institution
    Tokai Univ., Tokai
  • fYear
    2006
  • fDate
    8-12 May 2006
  • Firstpage
    725
  • Lastpage
    725
  • Abstract
    The device composed of La0.8Bi0.2MnO3/MgO/Co trilayer (with a tunnnel barrier made of MgO film) as an L1-xBixMnO3 substrate are prepared, and the magnetoresistance effect of the device is examined. Fundamental temperature properties of electrical conduction of the La0.8Bi0.2MnO3/MgO/Co trilayer device as a function of MgO thickness is determined. It was found that the magnetoresistance was about 33% of the maximum value when the MgO film thickness was 2.0 nm and the device shows damped oscillation with increasing MgO film thickness.
  • Keywords
    bismuth compounds; cobalt; electrical conductivity; ferromagnetic materials; lanthanum compounds; magnesium compounds; magnetoresistance; magnetoresistive devices; thin films; L1-xBixMnO3 substrate; La0.8Bi0.2MnO3-MgO-Co; damped oscillation; electrical conduction; film thickness; magnetoresistance effect; trilayer device; tunnnel barrier; Atmosphere; Bismuth; Colossal magnetoresistance; Current measurement; Electric resistance; Manganese; Powders; Substrates; Sun; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Magnetics Conference, 2006. INTERMAG 2006. IEEE International
  • Conference_Location
    San Diego, CA
  • Print_ISBN
    1-4244-1479-2
  • Type

    conf

  • DOI
    10.1109/INTMAG.2006.376449
  • Filename
    4262158
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2946338