Photon transistor incorporating an amplitude-squeezed transverse junction stripe laser

Summary form only given. The suppression of intensity noise in the light from a semiconductor laser and light-emitting diodes below the full shot noise level has been demonstrated for a variety of semiconductor junction light-emitters. Recent work has shown that cooled transverse junction stripe GaAs-AlGaAs lasers grown with high AsGa ratios are 4-5 dB quieter than the standard quantum limit (full shot noise) when strongly pumped. Similar quieting levels have been obtained with externally stabilised MQW lasers. The high bias currents at which these levels of noise suppression are obtained are generally too high to be useful in small signal applications. Nevertheless there is some interest in exploring circuit and device topologies employing quantum noise-suppressed "quiet-light" in the expectation that low threshold microcavity quiet-light emitters become available in the future. We report for the first time small signal analysis and demonstration of a quantum noise-suppressed photon transistor in which photon emission noise from a TJS laser diode emitter is suppressed below the full shot noise level by the same mechanism which operates in an electronic transistor.