DocumentCode
2946342
Title
Low cost modular integrated horn antenna array using heterojunction barrier diode detectors
Author
Kazemi, H. ; Nguyen, C. ; Brar, B. ; Rebeiz, G. ; Nagy, G. ; Tran, L. ; Young, A. ; Brown, E.R.
Author_Institution
Teledyne Scientific and Imaging LLC, Thousand Oaks, CA 91360, USA
fYear
2008
fDate
15-20 June 2008
Firstpage
297
Lastpage
300
Abstract
Heterojunction barrier diode (HBD) detectors are introduced with optimized zero bias and room temperature performance at millimeter wave frequencies. Through careful device development and fabrication techniques they have been scaled successfully to micron size values and exhibit high dc responsivity of 17 A/W at zero bias with a low capacitance of 1.5 fF/um2. At 100 GHz they have been shown to have rf responsivities of 23000 V/W, recording the highest value to date. An optimized antenna cavity, called an integrated horn antenna, has been designed and has shown to provide improved impedance matching to the HBD detector. A 1times 8 integrated horn array has been built using the most cost effective methods which is readily scalable in X and Y dimensions. Following the assembly of the array the antenna pattern and the noise equivalent delta temperature (NEDT) were measured. The lowest room temperature NEDT of 2.47 K has been measured for a direct detector at 30 Hz refresh rate showing an outstanding sensitivity to the millimeter wave radiation.
Keywords
cavity resonators; horn antennas; impedance matching; millimetre wave antenna arrays; at millimeter wave frequencies; frequency 100 GHz; frequency 30 Hz; heterojunction barrier diode detectors; low cost modular integrated horn antenna array; millimeter wave radiation; noise equivalent delta temperature; room temperature performance; temperature 2.47 K; Antenna arrays; Antenna measurements; Costs; Envelope detectors; Heterojunctions; Horn antennas; Millimeter wave technology; Sensor arrays; Temperature measurement; Temperature sensors; HBD; IHA; Integrated horn antenna; Millimeter wave imaging; NEDT; NEP; direct detector; heterojunction barrier diode; responsivity; sensitivity; terahertz;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 2008 IEEE MTT-S International
Conference_Location
Atlanta, GA
ISSN
0149-645X
Print_ISBN
978-1-4244-1780-3
Electronic_ISBN
0149-645X
Type
conf
DOI
10.1109/MWSYM.2008.4633162
Filename
4633162
Link To Document