Wideband 400 W pulsed power GaN HEMT amplifiers

Author

Krishnamurthy, K. ; Martin, J. ; Landberg, B. ; Vetury, R. ; Poulton, M.J.

Author_Institution

Aerospace and Defense Business Unit, RF Micro Devices, Inc., Charlotte, NC 28269, USA

fYear

2008

fDate

15-20 June 2008

Firstpage

303

Lastpage

306

Abstract

We have developed 400 W pulsed output power GaN HEMT amplifiers with 2.9 - 3.5 GHz bandwidth. Operating the amplifier from a 65 V drain supply under pulsed operation with 10% duty cycle and 100 mus pulse width obtains an output power in the range of 401 - 446 W over the band with a drain efficiency of 48 - 55%. The amplifier uses AlGaN/GaN HEMTs with a total device periphery of 44.4 mm and advanced source connected field plates for high breakdown voltage. These wideband high power amplifiers are suitable for use in pulsed radar applications.

Keywords

high electron mobility transistors; power amplifiers; pulsed power technology; AlGaN-GaN; GaN; HEMT amplifiers; bandwidth 2.9 GHz to 3.5 GHz; efficiency 48 percent to 55 percent; power 400 W; power 401 W to 446 W; pulsed power amplifiers; voltage 65 V; wideband amplifier; Aluminum gallium nitride; Bandwidth; Broadband amplifiers; Gallium nitride; HEMTs; Operational amplifiers; Power amplifiers; Power generation; Pulse amplifiers; Space vector pulse width modulation; Broadband amplifiers; Gallium Nitride (GaN); High-electron-mobility transistors (HEMTs); Power Amplifiers;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2008 IEEE MTT-S International

Conference_Location

Atlanta, GA

ISSN

0149-645X

Print_ISBN

978-1-4244-1780-3

Electronic_ISBN

0149-645X

Type

conf

DOI

10.1109/MWSYM.2008.4633163

Filename

4633163