• DocumentCode
    2946362
  • Title

    Dielectric breakdown in underoxidized magnetic tunnel junctions

  • Author

    Ventura, J. ; Ferreira, R. ; Sousa, J.B. ; Freitas, P.P.

  • Author_Institution
    IFIMUP, Porto
  • fYear
    2006
  • fDate
    8-12 May 2006
  • Firstpage
    727
  • Lastpage
    727
  • Abstract
    The authors study the dielectric breakdown (DB) in low resistance, underoxidized Mnlr/CoFe/AlOx/CoFe magnetic tunnel junctions (MTJs) and show that the breakdown occurred at localized spots of the barrier where large concentration of oxygen vacancies exist. They also show the dependence of the tunneling magnetoresistance (TMR) on the applied current of a 1x1 mum2 MTJ with (30 s)+(30 s)+5 oxidation time.
  • Keywords
    cobalt alloys; electric breakdown; ferromagnetic materials; iridium alloys; iron alloys; manganese alloys; oxidation; tunnelling magnetoresistance; vacancies (crystal); AlO; CoFe; MnIr; dielectric breakdown; oxidation; oxygen vacancies; tunneling magnetoresistance; underoxidized magnetic tunnel junctions; Dielectric breakdown; Dielectrics and electrical insulation; Electric breakdown; Electric resistance; Magnetic properties; Magnetic sensors; Magnetic tunneling; Oxidation; Plasma displays; Tunneling magnetoresistance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Magnetics Conference, 2006. INTERMAG 2006. IEEE International
  • Conference_Location
    San Diego, CA
  • Print_ISBN
    1-4244-1479-2
  • Type

    conf

  • DOI
    10.1109/INTMAG.2006.376451
  • Filename
    4262160
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2946362