Low threshold GaAsSb/GaAs broad area laser diodes emitting at 1220 nm

Author

Joos, J. ; Ecker, I. ; Ebeling, K.J.

Author_Institution

Dept. of Optoelectron., Ulm Univ., Germany

fYear

2000

fDate

10-15 Sept. 2000

Abstract

Summary form only given. GaAs-based laser diodes emitting around 13 μm have gained tremendous interest, not only because they are suitable sources for low dispersion optical fiber transmission, but rather due to the prospect of using their active material in vertical-cavity lasers (VCSELs). This paper deals with low threshold laser diodes containing a GaAsSb quantum well active layer. The lasers were grown by gas source molecular beam epitaxy (GSMBE).

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; laser transitions; molecular beam epitaxial growth; optical fabrication; optical transmitters; quantum well lasers; surface emitting lasers; 1220 nm; GaAs-based laser diodes; GaAsS; GaAsSb quantum well active layer; GaAsSb/GaAs broad area laser diodes; MBE; VCSELs; active material; gas source molecular beam epitax; low dispersion optical fiber transmission; low threshold; low threshold laser diodes; vertical-cavity lasers; Diode lasers; Fiber lasers; Gallium arsenide; Gas lasers; Molecular beam epitaxial growth; Optical fiber dispersion; Optical fibers; Optical materials; Quantum well lasers; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Europe, 2000. Conference Digest. 2000 Conference on

Conference_Location

Nice

Print_ISBN

0-7803-6319-1

Type

conf

DOI

10.1109/CLEOE.2000.909731

Filename

909731