Title :
A high efficiency broadband monolithic gallium nitride distributed power amplifier
Author :
Xie, Chenggang ; Pavio, Jeanne ; Griffey, David A. ; Hanson, Allen ; Singhal, Sameer
Author_Institution :
Rockwell Collins, Inc., Scottsdale, AZ 85251, USA
Abstract :
A 50-ohm 100-2200 MHz distributed power amplifier (DPA) MMIC has been developed using Nitronexpsilas proprietary GaN-on-Si NRF1 process. The DPA MMIC exhibits -10dB minimum input/output return loss, 39.4 dBm average output power, and a power added efficiencies of 30 to 66% over the entire bandwidth.
Keywords :
III-V semiconductors; MMIC power amplifiers; gallium compounds; high electron mobility transistors; wide band gap semiconductors; MMIC; frequency 100 MHz to 2200 MHz; gallium nitride distributed power amplifier; power added efficiency; resistivity 50 ohmm; Broadband amplifiers; Distributed amplifiers; Gallium nitride; HEMTs; High power amplifiers; III-V semiconductor materials; MMICs; Power amplifiers; Radio frequency; Radiofrequency amplifiers; Distributed power amplifier; GaN/Si HEMT; broadband power amplifier;
Conference_Titel :
Microwave Symposium Digest, 2008 IEEE MTT-S International
Conference_Location :
Atlanta, GA
Print_ISBN :
978-1-4244-1780-3
Electronic_ISBN :
0149-645X
DOI :
10.1109/MWSYM.2008.4633164
