DocumentCode :
2946392
Title :
Intrinsic Reliability of AlOx-based Magnetic Tunnel Junctions
Author :
Akerman, J. ; DeHerrera, M. ; Slaughter, J.M. ; Dave, R. ; Sun, J. ; Tehrani, S.
Author_Institution :
KTH, Kista
fYear :
2006
fDate :
8-12 May 2006
Firstpage :
729
Lastpage :
729
Abstract :
The intrinsic reliability of MTJs is studied via the ramped breakdown voltage (Vbd), which has the benefit of a much shorter measurement time than TDDB where a constant applied voltage is used. Ramped breakdown measurements were performed on wafers at room temperature for both bias polarities.
Keywords :
aluminium compounds; magnetic tunnelling; magnetoresistive devices; oxidation; reliability; AlO; bias polarities; intrinsic reliability; magnetic tunnel junctions; magnetoresistive random access memory; oxidation; ramped breakdown voltage; temperature 293 K to 298 K; Electric breakdown; Electric resistance; Electrical resistance measurement; Electrodes; Magnetic materials; Magnetic tunneling; Magnetoresistance; Materials reliability; Oxidation; Plasma measurements;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Magnetics Conference, 2006. INTERMAG 2006. IEEE International
Conference_Location :
San Diego, CA
Print_ISBN :
1-4244-1479-2
Type :
conf
DOI :
10.1109/INTMAG.2006.376453
Filename :
4262162
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2946392
بازگشت