• DocumentCode
    2946392
  • Title

    Intrinsic Reliability of AlOx-based Magnetic Tunnel Junctions

  • Author

    Akerman, J. ; DeHerrera, M. ; Slaughter, J.M. ; Dave, R. ; Sun, J. ; Tehrani, S.

  • Author_Institution
    KTH, Kista
  • fYear
    2006
  • fDate
    8-12 May 2006
  • Firstpage
    729
  • Lastpage
    729
  • Abstract
    The intrinsic reliability of MTJs is studied via the ramped breakdown voltage (Vbd), which has the benefit of a much shorter measurement time than TDDB where a constant applied voltage is used. Ramped breakdown measurements were performed on wafers at room temperature for both bias polarities.
  • Keywords
    aluminium compounds; magnetic tunnelling; magnetoresistive devices; oxidation; reliability; AlO; bias polarities; intrinsic reliability; magnetic tunnel junctions; magnetoresistive random access memory; oxidation; ramped breakdown voltage; temperature 293 K to 298 K; Electric breakdown; Electric resistance; Electrical resistance measurement; Electrodes; Magnetic materials; Magnetic tunneling; Magnetoresistance; Materials reliability; Oxidation; Plasma measurements;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Magnetics Conference, 2006. INTERMAG 2006. IEEE International
  • Conference_Location
    San Diego, CA
  • Print_ISBN
    1-4244-1479-2
  • Type

    conf

  • DOI
    10.1109/INTMAG.2006.376453
  • Filename
    4262162
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2946392