Optical gain and loss in 2.3-2.5 /spl mu/m InGaAsSb/AlGaAsSb QW broad-area and ridge-waveguide lasers

Author

Garbuzov, D.Z. ; Belenky, G.L. ; Donetsky, D.V. ; Martinelli, R.U. ; Lee, H. ; Connolly, J.C.

Author_Institution

Sarnoff Corp., Princeton, NJ, USA

fYear

2000

fDate

10-15 Sept. 2000

Abstract

Summary form only. We measured the current and temperature dependencies of the modal gain in 2.3-2.5 /spl mu/m InGaAsSb-AlGaAsSb-GaSb broad-area ridge-waveguide lasers. The laser active region consists of two strained quantum wells surrounded by two 0.34 /spl mu/m undoped Al/sub 0.31/Ga/sub 0.69/As/sub 0.625/Sb/sub 0.375/ separate confinement layers. The room-temperature optical-gain data obtained for a 2.3-/spl mu/m broad-area device allow the determination of internal loss, internal efficiency and the rate of broadening of material gain with temperature and current.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; gallium compounds; indium compounds; laser modes; laser transitions; optical losses; quantum well lasers; ridge waveguides; waveguide lasers; 2.3 to 2.5 mum; InGaAsSb-AlGaAsSb QW broad-area ridge-waveguide lasers; InGaAsSb-AlGaAsSb-GaSb; InGaAsSb-AlGaAsSb-GaSb broad-area ridge-waveguide lasers; internal efficiency; internal loss; laser active region; material gain; optical gain; optical loss; room-temperature optical-gain data; separate confinement layers; strained quantum wells; Land surface temperature; Lead; Mirrors; Molecular beam epitaxial growth; Optical losses; Optical pumping; Optical sensors; Semiconductor laser arrays; Stimulated emission; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Europe, 2000. Conference Digest. 2000 Conference on

Conference_Location

Nice

Print_ISBN

0-7803-6319-1

Type

conf

DOI

10.1109/CLEOE.2000.909733

Filename

909733