Title :
Over 57% efficiency C-band GaN HEMT high power amplifier with internal harmonic manipulation circuits
Author :
Otsuka, H. ; Yamanaka, K. ; Noto, H. ; Tsuyama, Y. ; Chaki, S. ; Inoue, A. ; Miyazaki, M.
Author_Institution :
Mitsubishi Electric Corporation, Information Technology R&D Center, 5-1-1 Ofuna, Kamakura, Kanagawa 247-8501 Japan
Abstract :
In this paper, a high efficiency C-band GaN HEMT high power amplifier with internal harmonic manipulation circuits is presented. We employed a new circuit topology for simultaneous high efficiency matching at both fundamental and 2nd-harmonic frequencies. The developed GaN HEMT amplifier has achieved over 57% drain efficiency (50% power-added-efficiency) with 100 W output power at C-band. This is the state-of-the-art efficiency of GaN HEMT high power amplifier at C-band to the best of our knowledge.
Keywords :
III-V semiconductors; gallium compounds; high electron mobility transistors; microwave power amplifiers; microwave power transistors; network topology; power semiconductor devices; wide band gap semiconductors; C-band HEMT high power amplifier; GaN; circuit topology; drain efficiency; efficiency 50 percent; efficiency 57 percent; internal harmonic manipulation circuits; power 100 W; power-added-efficiency; Circuits; Frequency; Gallium nitride; HEMTs; High power amplifiers; Impedance; Power amplifiers; Power generation; Power system harmonics; Pulse amplifiers; GaN HEMT; Harmonic manipulation; High efficiency; High power amplifier;
Conference_Titel :
Microwave Symposium Digest, 2008 IEEE MTT-S International
Conference_Location :
Atlanta, GA
Print_ISBN :
978-1-4244-1780-3
Electronic_ISBN :
0149-645X
DOI :
10.1109/MWSYM.2008.4633165
