Trapping Domain Walls in Diode-like Structures

Here, we simulate the operation of Ni₈₀Fe₂₀ domain wall diodes by solving the Landau-Lifshitz-Gilbert (LLG) equation. We show how the direction of motion affects the pinning of the wall and that the width of the output wire affects the diode operation. Here, domain walls are moved through the diode structure using a magnetic field, but recent experimental studies have shown that a diode-like operation is also seen using a bipolar spin-polarized current. The motion of domain walls through domain wall diodes has been simulated. The direction of wall motion determines where it is pinned prior to passing through the diode. The width of the output wire was varied to optimize the difference between the pass field in the forward and reverse directions.