Pseudo-potential calculations of the electronic and optical properties of GaxAlyIn1–x–yAs

Author

Louhadj, A. ; Barhoumi, H. ; Abid, H.

Author_Institution

Univ. of Sidi-Bel-Abbes, Sidi-Bel-Abbes

fYear

2007

fDate

6-8 Dec. 2007

Firstpage

1

Lastpage

3

Abstract

A method for calculating the electronic structure of the quaternary alloy GaAlInAs is presented with zinc blende structure. We have used the empirical pseudo-potential method coupled with the virtual crystal approximation (VCA). The electronic structures are studied for GaAlInAs (x = 0.24, y = 0.24) and GaAlInAs lattice matched to InP as well GaAs. In addition a method for calculating the refractive index is presented, which we used the Sellmeir model. The composition dependence of the refractive index is discussed, the results indicate that refractive index decrease with alloying composition of the quaternary alloy GaAlInAs lattice matched to InP and GaAs.

Keywords

III-V semiconductors; aluminium compounds; energy gap; gallium arsenide; gallium compounds; indium compounds; optical materials; pseudopotential methods; refractive index; Ga_xAl_yIn_1-x-yAs; GaAs; InP; Sellmeir model; VCA method; alloying composition; electronic structure; empirical pseudopotential calculations; energy gap; quaternary alloy; refractive index; virtual crystal approximation; zinc blende structure; Fiber lasers; Gallium arsenide; III-V semiconductor materials; Indium phosphide; Laboratories; Lattices; Molecular beam epitaxial growth; Optical materials; Refractive index; Zinc; alloy; electronic structures; empirical pseudo potential method; refractive index;

fLanguage

English

Publisher

ieee

Conference_Titel

ICTON Mediterranean Winter Conference, 2007. ICTON-MW 2007

Conference_Location

Sousse

Print_ISBN

978-1-4244-1639-4

Electronic_ISBN

978-1-4244-1639-4

Type

conf

DOI

10.1109/ICTONMW.2007.4446971

Filename

4446971