Title :
Pseudo-potential calculations of the electronic and optical properties of GaxAlyIn1–x–yAs
Author :
Louhadj, A. ; Barhoumi, H. ; Abid, H.
Author_Institution :
Univ. of Sidi-Bel-Abbes, Sidi-Bel-Abbes
Abstract :
A method for calculating the electronic structure of the quaternary alloy GaAlInAs is presented with zinc blende structure. We have used the empirical pseudo-potential method coupled with the virtual crystal approximation (VCA). The electronic structures are studied for GaAlInAs (x = 0.24, y = 0.24) and GaAlInAs lattice matched to InP as well GaAs. In addition a method for calculating the refractive index is presented, which we used the Sellmeir model. The composition dependence of the refractive index is discussed, the results indicate that refractive index decrease with alloying composition of the quaternary alloy GaAlInAs lattice matched to InP and GaAs.
Keywords :
III-V semiconductors; aluminium compounds; energy gap; gallium arsenide; gallium compounds; indium compounds; optical materials; pseudopotential methods; refractive index; GaxAlyIn1-x-yAs; GaAs; InP; Sellmeir model; VCA method; alloying composition; electronic structure; empirical pseudopotential calculations; energy gap; quaternary alloy; refractive index; virtual crystal approximation; zinc blende structure; Fiber lasers; Gallium arsenide; III-V semiconductor materials; Indium phosphide; Laboratories; Lattices; Molecular beam epitaxial growth; Optical materials; Refractive index; Zinc; alloy; electronic structures; empirical pseudo potential method; refractive index;
Conference_Titel :
ICTON Mediterranean Winter Conference, 2007. ICTON-MW 2007
Conference_Location :
Sousse
Print_ISBN :
978-1-4244-1639-4
Electronic_ISBN :
978-1-4244-1639-4
DOI :
10.1109/ICTONMW.2007.4446971
